IGBTs | Insulated Gate Bipolar Transistor | RS
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    IGBTs

    IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors: Bipolar transistors and MOSFET. RS have a curated range of IGBTs from a multitude of trusted brands, including Infineon, ON Semiconductor, STMicroelectronics, and many more.

    How do IGBT transistors work?

    IGBT transistors are three-terminal devices which apply a voltage to a semiconductor, changing its properties to block power flow when it's in the off state and allow power flow in the on state. They are controlled by a metal oxide semiconductor gate structure and are widely used for switching electrical power in applications, such as welding, electric cars, air conditioners, trains, and uninterruptible power supplies.

    What are the different types of IGBT Transistors?

    There are various types of IGBT transistors and they are categorised by different parameters, such as maximum voltage, collector current, packaging type, and switching speed. The type of IGBT transistor you choose will vary depending on the exact power level and the applications being considered, and so it is important to know as many of your exact requirements as possible to choose the correct IGBT for your application.

    What is a difference between MOSFETs and IGBTs?

    An IGBT has a much lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. However, MOSFETs are characterised by a lower forward voltage at lower current densities due to the absence of diode Vf in the IGBT's output BJT.An IGBT transistor module (insulated-gate bipolar transistor) consists of one or more IGBTs and is used in many types of industrial equipment due to its reliability. IGBT transistors are a cross between bipolar junction transistors (BJTs) and MOSFETs. They are highly efficient and fast switching, plus they have high current and low saturation voltage characteristics.

    What is a typical application of IGBTs?

    IGBTs are widely used in electronic applications, including: consumer electronics, industrial technology, transportation and electric motors, aerospace electronic devices, and applications within the energy sector.

    2345 產品顯示為 IGBTs

    Mitsubishi Electric
    300 A
    600 V
    20V
    1.15 kW
    2
    Dual
    122x62mm
    -
    -
    -
    -
    Dual
    -
    onsemi
    75 A
    1200 V
    ±20V
    188 W
    4
    -
    Q0PACK - Case 180AB (Pb-Free and Halide-Free)
    -
    -
    -
    -
    -
    -
    Infineon
    30 A
    600 V
    20V
    250 W
    1
    Single
    PG-TO252
    -
    N
    3
    -
    Single
    -
    Infineon
    75 A
    1200 V
    ±20V
    385 W
    7
    -
    -
    -
    -
    -
    -
    -
    -
    Infineon
    450 A
    1200 V
    ±20V
    1.6 kW
    2
    -
    -
    -
    -
    -
    -
    -
    -
    STMicroelectronics
    60 A
    600 V
    ±20V
    260 W
    -
    -
    TO-3P
    Through Hole
    N
    3
    -
    Single
    15.8 x 5 x 14.1mm
    onsemi
    80 A
    650 V
    ±20V
    366 W
    -
    -
    TO-247
    Through Hole
    N
    3
    1MHz
    Single
    16.26 x 5.3 x 21.08mm
    Infineon
    -
    650 V
    ±20V
    -
    -
    -
    PG-TO247-3
    -
    -
    -
    -
    -
    -
    Infineon
    74 A
    650 V
    ±20 V, ±30 V
    250 W
    -
    -
    PG-TO247-3
    -
    -
    3
    -
    -
    -
    Infineon
    45 A
    600 V
    ±20V
    150 W
    -
    Common Collector
    EASY1B
    PCB Mount
    N
    22
    1MHz
    3 Phase
    48 x 33.8 x 12mm
    Infineon
    450 A
    1200 V
    ±20V
    1600 W
    -
    Series
    ECONOD
    PCB Mount
    N
    11
    1MHz
    Series
    122.5 x 62.5 x 17mm
    Infineon
    50 A
    1200 V
    ±20V
    326 W
    -
    -
    TO-247
    Through Hole
    N
    3
    -
    Single
    16.13 x 5.21 x 21.1mm
    Infineon
    25 A
    650 V
    30V
    32.5 W
    1
    Single
    PG-TO220
    -
    N
    3
    -
    Single
    -
    onsemi
    50 A
    650 V
    15V
    -
    6
    3 Phase
    SPM49-CAB
    Through Hole
    N
    -
    -
    -
    -
    STMicroelectronics
    -
    650 V
    ±30V
    167 W
    1
    -
    TO-247 long leads
    -
    N
    3
    -
    Series
    -
    STMicroelectronics
    40 A
    600 V
    ±20V
    167 W
    -
    -
    TO-247
    Through Hole
    N
    3
    -
    Single
    15.75 x 5.15 x 20.15mm
    Mitsubishi Electric
    100
    1200 V
    20V
    -
    6
    3 Phase Bridge
    Module
    PCB Mount
    N
    -
    -
    3 Phase
    -
    Infineon
    200 A
    750 V
    15V
    1.07 kW
    3
    -
    TO247PLUS
    -
    -
    -
    -
    -
    -
    STMicroelectronics
    40 A
    650 V
    ±20V
    147 W
    1
    -
    TO-247
    -
    -
    3
    -
    Single
    -
    Mitsubishi Electric
    10
    600 V
    -
    -
    6
    Array
    PowerDIP Module
    Through Hole
    N
    -
    -
    3 Phase
    -
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