Infineon MOSFET Gate Driver, 260 mA 8-Pin 15.4V, SOIC
- RS庫存編號:
- 226-6200
- 製造零件編號:
- IRS21531DSTRPBF
- 製造商:
- Infineon
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HK$14,895.00
訂單超過 HK$250.00 免費送貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | HK$5.958 | HK$14,895.00 |
| 12500 + | HK$5.781 | HK$14,452.50 |
* 參考價格
- RS庫存編號:
- 226-6200
- 製造零件編號:
- IRS21531DSTRPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 260mA | |
| Pin Count | 8 | |
| Fall Time | 80ns | |
| Package Type | SOIC | |
| Driver Type | MOSFET | |
| Number of Outputs | 2 | |
| Rise Time | 220ns | |
| Minimum Supply Voltage | 10.1V | |
| Maximum Supply Voltage | 15.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Series | IRS | |
| Length | 5mm | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Height | 1.75mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Gate Driver | ||
Output Current 260mA | ||
Pin Count 8 | ||
Fall Time 80ns | ||
Package Type SOIC | ||
Driver Type MOSFET | ||
Number of Outputs 2 | ||
Rise Time 220ns | ||
Minimum Supply Voltage 10.1V | ||
Maximum Supply Voltage 15.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Series IRS | ||
Length 5mm | ||
Width 4mm | ||
Standards/Approvals No | ||
Height 1.75mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
Infineon IRS Series Gate Driver, 10.1V Minimum Supply Voltage, 260mA Output Current - IRS21531DSTRPBF
This gate driver provides dual-channel MOSFET drive for low-voltage switching applications, supplying controlled gate pulses to power transistors across a modest supply range. It is intended for surface-mount assembly and operates over a wide temperature span suitable for demanding thermal environments.
Features and Benefits:
• Dual outputs deliver independent MOSFET gate control and simplified gate drive
• 260mA output current supplies moderate gate charging needs
• 10.1V to 15.4V supply range supports common low-voltage supplies
• Fast rise time 220ns enables Rapid turn-on response
• Fall time 80ns reduces switching transition duration
• Rated to 150°C allows operation at elevated junction temperatures
• 260mA output current supplies moderate gate charging needs
• 10.1V to 15.4V supply range supports common low-voltage supplies
• Fast rise time 220ns enables Rapid turn-on response
• Fall time 80ns reduces switching transition duration
• Rated to 150°C allows operation at elevated junction temperatures
Applications
• Used for half-bridge MOSFET gate driving in power converters
• Suitable for motor-drive gate control in Compact assemblies
• Can be used for synchronous rectifier driving in DC-DC converters
• Ideal for gate driving on dense surface-mount power modules
• Used with low-voltage battery-powered switching designs
• Suitable for motor-drive gate control in Compact assemblies
• Can be used for synchronous rectifier driving in DC-DC converters
• Ideal for gate driving on dense surface-mount power modules
• Used with low-voltage battery-powered switching designs
What package format should I plan for on my PCB?
It is supplied in an 8-pin SOIC package for standard surface-mount pads.
How small is the component footprint for tight layouts?
The package measures 4 mm in width and 5 mm in length for Compact placement.
What thermal range can the device tolerate during operation?
It is specified to operate from -55°C up to a maximum of 150°C.
How many output channels are available for gate signalling?
There are two independent output channels for separate MOSFET gates.
What mounting method is required for assembly?
The device is intended for surface-mount placement on a PCB.