Vishay SIA433EDJ-T1-GE3 IGBT
- RS庫存編號:
- 180-7332
- 製造零件編號:
- SIA433EDJ-T1-GE3
- 製造商:
- Vishay
3000 現貨庫存,可於3工作日發貨。
單價 个(每带 3000 )
HK$2.603
單位 | 每單位 | 每卷* |
---|---|---|
3000 - 12000 | HK$2.603 | HK$7,809.00 |
15000 + | HK$2.551 | HK$7,653.00 |
* 參考價格
- RS庫存編號:
- 180-7332
- 製造零件編號:
- SIA433EDJ-T1-GE3
- 製造商:
- Vishay
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
Vishay MOSFET
The Vishay surface mount P-channel PowerPAK-SC70-6 MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 12V. It has a drain-source resistance of 18mohms at a gate-source voltage of 4.5V. It has a maximum power dissipation of 19W and continuous drain current of 12A. It has a minimum and a maximum driving voltage of 1.8V and 4.5V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
Built-in ESD protection with zener diode
Halogen free
Lead (Pb) free component
Low on-resistance
New thermally enhanced PowerPAK SC-70 package
Operating temperature ranges between -55°C and 150°C
Small footprint area
TrenchFET power MOSFET
Typical ESD performance is 1800V
Halogen free
Lead (Pb) free component
Low on-resistance
New thermally enhanced PowerPAK SC-70 package
Operating temperature ranges between -55°C and 150°C
Small footprint area
TrenchFET power MOSFET
Typical ESD performance is 1800V
Applications
Battery switches
Charger switches
Load switches
Portable devices
Charger switches
Load switches
Portable devices
Certifications
ANSI/ESD S20.20:2014
BS EN 61340-5-1:2007
Rg tested
BS EN 61340-5-1:2007
Rg tested
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.