Vishay Dual Plus Integrated Schottky 2 Type P-Channel MOSFET, 4.5 A, 30 V, 6-Pin PowerPAK SC-70-6L SIA817EDJ-T1-GE3
- RS庫存編號:
- 180-7339
- 製造零件編號:
- SIA817EDJ-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
HK$5,202.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年9月27日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | HK$1.734 | HK$5,202.00 |
| 6000 - 9000 | HK$1.682 | HK$5,046.00 |
| 12000 + | HK$1.632 | HK$4,896.00 |
* 參考價格
- RS庫存編號:
- 180-7339
- 製造零件編號:
- SIA817EDJ-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SC-70-6L | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.065Ω | |
| Forward Voltage Vf | 0.56V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Typical Gate Charge Qg @ Vgs | 6.6nC | |
| Maximum Power Dissipation Pd | 6.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual Plus Integrated Schottky | |
| Width | 2.05mm | |
| Length | 2.05mm | |
| Standards/Approvals | No | |
| Height | 0.75mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SC-70-6L | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.065Ω | ||
Forward Voltage Vf 0.56V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Typical Gate Charge Qg @ Vgs 6.6nC | ||
Maximum Power Dissipation Pd 6.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual Plus Integrated Schottky | ||
Width 2.05mm | ||
Length 2.05mm | ||
Standards/Approvals No | ||
Height 0.75mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay SIA817EDJ is a P-channel MOSFET with schottky diode having drain to source(Vds) voltage of -30V. It is having configuration of dual plus integrated schottky. The gate to source voltage(VGS) is 12V. It is having power PAK SC-70 package. It offers drain to source resistance (RDS.) 0.065ohms at 10VGS and 0.08ohms at 4.5VGS. Maximum drain current -4.5A.
Little foot plus Schottky power MOSFET
Thermally enhanced Power PAK SC-70 package small footprint area low on resistance thin 0.75 mm profile
Typical ESD protection (MOSFET): 1500 V (HBM)
相关链接
- Vishay Dual Plus Integrated Schottky 2 Type P-Channel MOSFET 30 V, 6-Pin PowerPAK SC-70-6L SIA817EDJ-T1-GE3
- Vishay SIA456DJ-T1-GE3 6-Pin PowerPAK SC-70-6L, Surface
- Vishay SIA433EDJ-T1-GE3 6-Pin PowerPAK SC-70-6L, Surface
- Vishay Single 1 Type P-Channel MOSFET 20 V, 6-Pin PowerPAK SC-70-6L SIA437DJ-T1-GE3
- Vishay Type P-Channel MOSFET 12 V, 6-Pin PowerPAK SIA533EDJ-T1-GE3
- Vishay SIB Type P-Channel MOSFET 30 V P, 6-Pin PowerPAK SC-75 SIB4317EDK-T1-GE3
- Vishay SIS9122 Dual N-Channel Single MOSFETs 100 V Enhancement, 8-Pin PowerPAK SIS9122DN-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3