Vishay SIA456DJ-T1-GE3, N-Channel IGBT, 6-Pin PowerPAK SC-70-6L, Surface
- RS庫存編號:
- 180-7793
- 製造零件編號:
- SIA456DJ-T1-GE3
- 製造商:
- Vishay
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- RS庫存編號:
- 180-7793
- 製造零件編號:
- SIA456DJ-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | IGBT | |
| Maximum Power Dissipation Pd | 19W | |
| Package Type | PowerPAK SC-70-6L | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 6 | |
| Maximum Gate Emitter Voltage VGEO | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Length | 2.15mm | |
| Standards/Approvals | RoHS | |
| Width | 1.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type IGBT | ||
Maximum Power Dissipation Pd 19W | ||
Package Type PowerPAK SC-70-6L | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 6 | ||
Maximum Gate Emitter Voltage VGEO 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Length 2.15mm | ||
Standards/Approvals RoHS | ||
Width 1.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel SC-70-6 MOSFET is a new age product with a drain-source voltage of 200V and a maximum gate-source voltage of 16V. It has a drain-source resistance of 1380mohms at a gate-source voltage of 4.5V. It has a maximum power dissipation of 19W and continuous drain current of 2.6A. It has a minimum and a maximum driving voltage of 1.8V and 4.5V respectively. It has application in boost converter for portable devices. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Low on-resistance
• New thermally enhanced PowerPAK SC-70 package - Small footprint area
• Operating temperature ranges between -55°C and 150°C
• TrenchFET Power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
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