Vishay SUD08P06-155L-GE3, Type P-Channel IGBT, 3-Pin TO-252, Surface

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RS庫存編號:
180-7411
製造零件編號:
SUD08P06-155L-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

IGBT

Maximum Power Dissipation Pd

20.8W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type P

Pin Count

3

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

2.38mm

Length

6.22mm

Standards/Approvals

RoHS-compliant

Automotive Standard

No

Vishay MOSFET


The Vishay MOSFET is a P-channel, TO-252-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 52mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 20.8W. It can be used in load switches for portable devices. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

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