STMicroelectronics STGW100H65FB2-4, N-Channel IGBT, 145 A 650 V, 4-Pin TO-247-4, Through Hole

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小計（1 包，共 2 件）*

HK$144.30

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2 - 6HK$72.15HK$144.30
8 - 14HK$70.35HK$140.70
16 +HK$69.25HK$138.50

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包裝方式：
RS庫存編號:
212-2107
製造零件編號:
STGW100H65FB2-4
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

145A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

441W

Package Type

TO-247-4

Mount Type

Through Hole

Channel Type

N

Pin Count

4

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Width

21.1mm

Length

15.9mm

Series

STG

Height

5.1mm

Automotive Standard

No

IGBT


The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive VCE(sat) temperature coefficient

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