製造零件編號

Infineon, Type N-Channel Reverse Conducting IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

RS庫存編號:: 215-6645
製造零件編號:: IHW50N65R5XKSA1
製造商:: Infineon

Infineon, Type N-Channel Reverse Conducting IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 30 件）*

HK$557.49

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單位	每單位	每管*
30 - 60	HK$18.583	HK$557.49
90 - 120	HK$17.84	HK$535.20
150 +	HK$17.38	HK$521.40

* 參考價格

RS庫存編號:: 215-6645
製造零件編號:: IHW50N65R5XKSA1
製造商:: Infineon

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current Ic	80A
	Product Type	Reverse Conducting IGBT
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	282W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.35V
	Maximum Operating Temperature	175°C
	Standards/Approvals	Pb-free lead plating, RoHS, JESD-022
	Series	Resonant Switching
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current Ic 80A
	Product Type Reverse Conducting IGBT
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 282W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.35V
	Maximum Operating Temperature 175°C
	Standards/Approvals Pb-free lead plating, RoHS, JESD-022
	Series Resonant Switching
	Automotive Standard No

Datasheet-IHW50N65R5XKSA1

The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

Infineon, Type N-Channel Reverse Conducting IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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