Infineon, Type N-Channel Reverse Conducting IGBT, 65 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 225-0571
- 製造零件編號:
- IHW30N65R6XKSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 管，共 240 件）*
HK$3,109.68
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年10月26日 發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 240 - 480 | HK$12.957 | HK$3,109.68 |
| 720 - 960 | HK$12.624 | HK$3,029.76 |
| 1200 + | HK$12.465 | HK$2,991.60 |
* 參考價格
- RS庫存編號:
- 225-0571
- 製造零件編號:
- IHW30N65R6XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 65A | |
| Product Type | Reverse Conducting IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 160W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Height | 5.3mm | |
| Length | 41.9mm | |
| Series | IHW30N65R6 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 65A | ||
Product Type Reverse Conducting IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 160W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Height 5.3mm | ||
Length 41.9mm | ||
Series IHW30N65R6 | ||
Automotive Standard No | ||
The Infineon IHW30N65R6 is the 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.
High ruggedness and stable temperature behaviour
Low EMI
Pb-free lead plating, RoHS compliant
Powerful monolithic reverse-conducting diode with low forward voltage
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