Infineon IHW50N65R5XKSA1, Type N-Channel Reverse Conducting IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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HK$51.50

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包裝方式:
RS庫存編號:
215-6646
製造零件編號:
IHW50N65R5XKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

Reverse Conducting IGBT

Maximum Continuous Collector Current Ic

80A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

282W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.35V

Maximum Operating Temperature

175°C

Series

Resonant Switching

Standards/Approvals

Pb-free lead plating, RoHS, JESD-022

Automotive Standard

No

The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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