Infineon, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 218-4391
- 製造零件編號:
- IGW75N65H5XKSA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 管，共 30 件）*
HK$1,014.81
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | HK$33.827 | HK$1,014.81 |
| 60 - 90 | HK$33.09 | HK$992.70 |
| 120 + | HK$32.357 | HK$970.71 |
* 參考價格
- RS庫存編號:
- 218-4391
- 製造零件編號:
- IGW75N65H5XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 198W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Series | IGW75N65H5 | |
| Height | 5.21mm | |
| Length | 21.1mm | |
| Standards/Approvals | JEDEC, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 198W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 175°C | ||
Series IGW75N65H5 | ||
Height 5.21mm | ||
Length 21.1mm | ||
Standards/Approvals JEDEC, RoHS | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 120 A.
Higher power density design
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient
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