Infineon, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 226-6116
- 製造零件編號:
- IKW50N65EH5XKSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
HK$933.30
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 150 件從 2026年8月31日 起裝運發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | HK$31.11 | HK$933.30 |
| 150 + | HK$28.00 | HK$840.00 |
* 參考價格
- RS庫存編號:
- 226-6116
- 製造零件編號:
- IKW50N65EH5XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 275W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Width | 16.13mm | |
| Standards/Approvals | JEDEC | |
| Length | 41.42mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 275W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Width 16.13mm | ||
Standards/Approvals JEDEC | ||
Length 41.42mm | ||
Automotive Standard No | ||
The Infineon IKW50N65EH5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
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