Infineon FP100R12KT4BOSA1 IGBT Module 1200 V
- RS庫存編號:
- 244-5380
- 製造零件編號:
- FP100R12KT4BOSA1
- 製造商:
- Infineon
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HK$1,074.70
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- 從 2027年3月24日 發貨
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|---|---|
| 1 - 1 | HK$1,074.70 |
| 2 - 2 | HK$1,053.10 |
| 3 - 3 | HK$1,032.20 |
| 4 - 4 | HK$1,011.50 |
| 5 + | HK$991.30 |
* 參考價格
- RS庫存編號:
- 244-5380
- 製造零件編號:
- FP100R12KT4BOSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 515W | |
| Number of Transistors | 7 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 62mm | |
| Series | FP100R12KT4 | |
| Length | 122mm | |
| Height | 17mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 515W | ||
Number of Transistors 7 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 62mm | ||
Series FP100R12KT4 | ||
Length 122mm | ||
Height 17mm | ||
Automotive Standard No | ||
Infineon FP100R12KT4 Series IGBT Module, 1200V Max Collector-Emitter Voltage, 515W Maximum Power Dissipation - FP100R12KT4BOSA1
This IGBT module is a high-voltage switching component designed for power-electronics applications requiring elevated voltage handling and thermal endurance. It is intended to manage significant power dissipation in industrial environments and operates across a wide temperature range, offering compatibility where automotive-grade alternatives are not required.
Features and Benefits:
• 1200 V blocking capability enabling high-voltage switching
• 515 W power dissipation capacity for heavy-duty loads
• VGE limit of 20 V for controlled gate-drive design
• VCE(sat) of 2.1 V reducing conduction losses under load
• Seven-transistor configuration providing dense switching topology
• 150 °C maximum junction rating for high-temperature operation
• 515 W power dissipation capacity for heavy-duty loads
• VGE limit of 20 V for controlled gate-drive design
• VCE(sat) of 2.1 V reducing conduction losses under load
• Seven-transistor configuration providing dense switching topology
• 150 °C maximum junction rating for high-temperature operation
Applications
• Suitable for industrial motor-drive inverter stages
• Ideal for medium-voltage power converters and UPS systems
• Used with high-power switching arrays in renewable inverters
• Can be used for traction and heavy-equipment power modules
• Ideal for medium-voltage power converters and UPS systems
• Used with high-power switching arrays in renewable inverters
• Can be used for traction and heavy-equipment power modules
What gate-drive constraint should be observed?
The device requires gate-emitter voltages not exceeding 20 V to prevent gate damage.
How does thermal tolerance affect cooling design?
A maximum operating temperature of 150 °C permits smaller heatsink margins but still requires an adequate thermal Interface and cooling for continuous 515 W dissipation.
What electrical stress does the module withstand during blocking?
It is specified to withstand collector-emitter voltages up to 1200 V in off-state conditions.
How many switching elements are present internally?
The module contains seven transistors to support multi-switch topologies.
Are there any material restrictions for selection?
The unit conforms to RoHS requirements and therefore excludes certain restricted substances.
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