Infineon FP100R12KT4BOSA1 IGBT Module 1.2 kV

RS庫存編號:: 244-5380
製造零件編號:: FP100R12KT4BOSA1
製造商:: Infineon

Infineon FP100R12KT4BOSA1 IGBT Module 1.2 kV

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小計（1 件）*

HK$1,074.70

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單位	每單位	節省
1 - 1	HK$1,074.70	-
2 - 2	HK$1,053.10	2%
3 - 3	HK$1,032.20	3%
4 - 4	HK$1,011.50	5%
5 +	HK$991.30	7%

* 參考價格

RS庫存編號:: 244-5380
製造零件編號:: FP100R12KT4BOSA1
製造商:: Infineon

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1.2kV
	Maximum Power Dissipation Pd	515W
	Number of Transistors	7
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	150°C
	Height	17mm
	Width	62mm
	Standards/Approvals	RoHS
	Series	FP100R12KT4
	Length	122mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1.2kV
	Maximum Power Dissipation Pd 515W
	Number of Transistors 7
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 150°C
	Height 17mm
	Width 62mm
	Standards/Approvals RoHS
	Series FP100R12KT4
	Length 122mm
	Automotive Standard No

Datasheet - FP100R12KT4BOSA1

Infineon FP100R12KT4 Series IGBT Module, 1200V Max Collector-Emitter Voltage, 515W Maximum Power Dissipation - FP100R12KT4BOSA1

This IGBT module is a high-voltage switching component designed for power-electronics applications requiring elevated voltage handling and thermal endurance. It is intended to manage significant power dissipation in industrial environments and operates across a wide temperature range, offering compatibility where automotive-grade alternatives are not required.

Features and Benefits:

• 1200 V blocking capability enabling high-voltage switching
• 515 W power dissipation capacity for heavy-duty loads
• VGE limit of 20 V for controlled gate-drive design
• VCE(sat) of 2.1 V reducing conduction losses under load
• Seven-transistor configuration providing dense switching topology
• 150 °C maximum junction rating for high-temperature operation

Applications

• Suitable for industrial motor-drive inverter stages
• Ideal for medium-voltage power converters and UPS systems
• Used with high-power switching arrays in renewable inverters
• Can be used for traction and heavy-equipment power modules

What gate-drive constraint should be observed?

The device requires gate-emitter voltages not exceeding 20 V to prevent gate damage.

How does thermal tolerance affect cooling design?

A maximum operating temperature of 150 °C permits smaller heatsink margins but still requires an adequate thermal Interface and cooling for continuous 515 W dissipation.

What electrical stress does the module withstand during blocking?

It is specified to withstand collector-emitter voltages up to 1200 V in off-state conditions.

How many switching elements are present internally?

The module contains seven transistors to support multi-switch topologies.

Are there any material restrictions for selection?

The unit conforms to RoHS requirements and therefore excludes certain restricted substances.