Infineon FP75R12KT4B11BOSA1 IGBT Module 1.2 kV
- RS庫存編號:
- 244-5848
- 製造零件編號:
- FP75R12KT4B11BOSA1
- 製造商:
- Infineon
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HK$916.20
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單位 | 每單位 |
|---|---|
| 1 - 1 | HK$916.20 |
| 2 - 2 | HK$898.00 |
| 3 - 3 | HK$879.90 |
| 4 - 4 | HK$862.30 |
| 5 + | HK$845.00 |
* 參考價格
- RS庫存編號:
- 244-5848
- 製造零件編號:
- FP75R12KT4B11BOSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 385W | |
| Number of Transistors | 7 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Operating Temperature | 150°C | |
| Width | 62mm | |
| Series | FP75R12KT4B11B | |
| Standards/Approvals | RoHS | |
| Length | 122mm | |
| Height | 17mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 385W | ||
Number of Transistors 7 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Operating Temperature 150°C | ||
Width 62mm | ||
Series FP75R12KT4B11B | ||
Standards/Approvals RoHS | ||
Length 122mm | ||
Height 17mm | ||
Automotive Standard No | ||
The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.
Electrical Features
Low switching losses
Tvj op = 150° C
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
Pressfit contact technology
Standard housing
相关链接
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