Infineon FP30R06W1E3BOMA1 IGBT Module 600 V
- RS庫存編號:
- 244-5395
- 製造零件編號:
- FP30R06W1E3BOMA1
- 製造商:
- Infineon
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HK$5,312.71
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單位 | 每單位 | 每托盤* |
|---|---|---|
| 24 - 24 | HK$221.363 | HK$5,312.71 |
| 48 - 48 | HK$216.933 | HK$5,206.39 |
| 72 + | HK$212.60 | HK$5,102.40 |
* 參考價格
- RS庫存編號:
- 244-5395
- 製造零件編號:
- FP30R06W1E3BOMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 115W | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 62.8mm | |
| Width | 33.8mm | |
| Standards/Approvals | RoHS | |
| Series | FP30R06W1E3B | |
| Height | 12mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 115W | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 62.8mm | ||
Width 33.8mm | ||
Standards/Approvals RoHS | ||
Series FP30R06W1E3B | ||
Height 12mm | ||
Automotive Standard No | ||
Infineon FP30R06W1E3B Series IGBT Module, 600V Max Collector-Emitter Voltage, 115W Maximum Power Dissipation - FP30R06W1E3BOMA1
This IGBT module is a power semiconductor device designed to switch and control high-voltage DC in industrial converters and power systems. It operates across a broad temperature span and is intended for applications where high voltage handling and defined gate control are required.
Features and Benefits:
• 600 V rating enables handling of high-voltage DC circuits
• 115 W maximum dissipation allows sustained power handling
• VGE 20 V gate tolerance supports standard gate-drive voltages
• Low VCE(sat) 2 V reduces conduction losses during on-state
• Seven-transistor topology increases switching density and functionality
• RoHS compliance ensures restriction of hazardous substances
• 115 W maximum dissipation allows sustained power handling
• VGE 20 V gate tolerance supports standard gate-drive voltages
• Low VCE(sat) 2 V reduces conduction losses during on-state
• Seven-transistor topology increases switching density and functionality
• RoHS compliance ensures restriction of hazardous substances
Applications
• Suitable for medium-voltage inverter stages in industrial drives
• Ideal for power conversion in renewable-energy inverters
• Used with motor-control units requiring multiple switching elements
• Can be used for DC-DC conversion in high-voltage systems
• Suitable for laboratory test rigs evaluating high-temperature switching
• Ideal for power conversion in renewable-energy inverters
• Used with motor-control units requiring multiple switching elements
• Can be used for DC-DC conversion in high-voltage systems
• Suitable for laboratory test rigs evaluating high-temperature switching
What thermal extremes can it withstand during operation?
It is rated to function down to −40 °C and up to 150 °C continuous junction temperature.
How does the transistor count influence circuit design?
Having seven transistors permits Compact multi-switch arrangements and reduces external component count for multi-phase or parallel configurations.
What electrical limit defines the off-state voltage capability?
The module's maximum collector-emitter voltage specifies its off-state voltage withstand at 600 V.
How should designers account for power loss in thermal planning?
Use the 115 W maximum power dissipation figure to size heatsinking and thermal interfaces to maintain junction temperature limits.
Are there any environmental supply restrictions indicated for selection?
The unit meets RoHS requirements restricting certain hazardous materials in the assembly.
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