Infineon FS150R12KT4B11BOSA1 IGBT Module, 150 A 1.2 kV
- RS庫存編號:
- 244-5407
- 製造零件編號:
- FS150R12KT4B11BOSA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 托盤，共 10 件）*
HK$9,129.20
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單位 | 每單位 | 每托盤* |
|---|---|---|
| 10 - 10 | HK$912.92 | HK$9,129.20 |
| 20 - 20 | HK$894.66 | HK$8,946.60 |
| 30 + | HK$876.77 | HK$8,767.70 |
* 參考價格
- RS庫存編號:
- 244-5407
- 製造零件編號:
- FS150R12KT4B11BOSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 150A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation Pd | 750W | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | FS | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 150A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Number of Transistors 6 | ||
Maximum Power Dissipation Pd 750W | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Series FS | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.10 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.35 nF
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