onsemi NXH350N100H4Q2F2P1G IGBT Module 1 kV Q2PACK, Surface

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小計(1 托盤,共 36 件)*

HK$55,587.60

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  • 從 2027年2月15日 發貨
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每單位
每托盤*
36 - 36HK$1,544.10HK$55,587.60
72 - 72HK$1,513.217HK$54,475.81
108 +HK$1,482.956HK$53,386.42

* 參考價格

RS庫存編號:
245-6973
製造零件編號:
NXH350N100H4Q2F2P1G
製造商:
onsemi
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品牌

onsemi

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1kV

Maximum Power Dissipation Pd

592W

Number of Transistors

4

Package Type

Q2PACK

Mount Type

Surface

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Width

47.3mm

Standards/Approvals

RoHS

Series

NXH350N100H4Q2F2P1G

Length

93.1mm

Height

12.3mm

Automotive Standard

No

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins


The ON Semiconductor Three Level NPC Q2Pack Module is a high density, integrated power module combines high performance IGBTs with rugged anti parallel diodes.

Extremely efficient trench with field stop technology

Low switching loss reduces system power dissipation

Module design offers high power density

Low inductive layout

Low package height

These devices are Pb free, Halogen Free and are RoHS Compliant

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