onsemi IGBT Module 1 kV Q2BOOST - Case 180BR, Surface
- RS庫存編號:
- 245-6987
- 製造零件編號:
- NXH450B100H4Q2F2SG
- 製造商:
- onsemi
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- RS庫存編號:
- 245-6987
- 製造零件編號:
- NXH450B100H4Q2F2SG
- 製造商:
- onsemi
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1kV | |
| Maximum Power Dissipation Pd | 79W | |
| Number of Transistors | 2 | |
| Package Type | Q2BOOST - Case 180BR | |
| Mount Type | Surface | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | NXH450B100H4Q2F2SG | |
| Width | 47.3mm | |
| Standards/Approvals | RoHS | |
| Height | 12.3mm | |
| Length | 93.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1kV | ||
Maximum Power Dissipation Pd 79W | ||
Number of Transistors 2 | ||
Package Type Q2BOOST - Case 180BR | ||
Mount Type Surface | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series NXH450B100H4Q2F2SG | ||
Width 47.3mm | ||
Standards/Approvals RoHS | ||
Height 12.3mm | ||
Length 93.1mm | ||
Automotive Standard No | ||
The ON Semiconductor Q2BOOST Module is a Si or SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor.
Silicon or SiC Hybrid technology maximizes power density
Low switching loss reduces system power dissipation
Low inductive layout
Press fit and solder pin options
This Device is Pb free, Halogen Free and is RoHS Compliant
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