Infineon OptiMOS Type N-Channel MOSFET, 314 A, 120 V Enhancement, 8-Pin PG-HSOF-8-1 IAUTN12S5N017ATMA1

此圖片僅供參考,請參閲產品詳細資訊及規格

小計(1 卷,共 2000 件)*

HK$81,720.00

Add to Basket
選擇或輸入數量
暫時缺貨
  • 2026年8月28日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每卷*
2000 +HK$40.86HK$81,720.00

* 參考價格

RS庫存編號:
284-667
製造零件編號:
IAUTN12S5N017ATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

314A

Maximum Drain Source Voltage Vds

120V

Package Type

PG-HSOF-8-1

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

358W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon OptiMOS 5 automotive power MOSFET is engineered for robust performance in demanding applications. Featuring the OptiMOS 5 technology, it excels in efficiency and reliability, making it an Ideal choice for automotive power management solutions. Its N channel enhancement mode structure delivers high level functionality while adhering to rigorous industry standards. Designed to withstand extreme conditions, this power transistor ensures operability up to 175°C and features an extended qualification beyond AEC Q101.

Optimised for automotive compatibility

Enhanced testing ensures dependable performance

Robust design with Advanced thermal management

MSL1 rating supports 260°C Peak reflow

RoHS compliant for eco friendly initiatives

Avalanche testing confirms transient resilience

相关链接

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。