onsemi EliteSiC N-Channel MOSFET, 55 A, 650 V Enhancement, 8-Pin HPSOF-8L NTBL032N065M3S
- RS庫存編號:
- 333-416
- 製造零件編號:
- NTBL032N065M3S
- 製造商:
- onsemi
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HK$60.80
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- 加上 1,907 件從 2026年11月09日 起發貨
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膠帶 | 每膠帶 | 節省 |
|---|---|---|
| 1 - 9 | HK$60.80 | - |
| 10 - 99 | HK$54.70 | 10% |
| 100 - 499 | HK$50.40 | 17% |
| 500 - 999 | HK$46.70 | 23% |
| 1000 + | HK$45.40 | 25% |
* 參考價格
- RS庫存編號:
- 333-416
- 製造零件編號:
- NTBL032N065M3S
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EliteSiC | |
| Package Type | HPSOF-8L | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 227W | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 6V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.9mm | |
| Height | 2.3mm | |
| Standards/Approvals | RoHS with exemption 7a, Halide Free, Pb-Free | |
| Width | 10.38mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EliteSiC | ||
Package Type HPSOF-8L | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 227W | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 6V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 175°C | ||
Length 9.9mm | ||
Height 2.3mm | ||
Standards/Approvals RoHS with exemption 7a, Halide Free, Pb-Free | ||
Width 10.38mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor SiC MOSFET designed for efficient power switching, offering low conduction losses and enhanced thermal performance. Its compact structure ensures reliable operation in high-power applications while minimizing space requirements. This device is optimized for energy efficiency, reducing overall system power dissipation.
H PSOF8L package
RoHS compliant
Pb free
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