onsemi NTB N-Channel MOSFET, 58 A, 1.2 kV Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1

RS庫存編號:: 254-7666
製造零件編號:: NTBL045N065SC1
製造商:: onsemi

onsemi NTB N-Channel MOSFET, 58 A, 1.2 kV Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1

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小計（1 卷，共 2000 件）*

HK$128,872.00

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單位	每單位	每卷*
2000 - 2000	HK$64.436	HK$128,872.00
4000 - 4000	HK$63.147	HK$126,294.00
6000 +	HK$61.884	HK$123,768.00

* 參考價格

RS庫存編號:: 254-7666
製造零件編號:: NTBL045N065SC1
製造商:: onsemi

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產品詳細資訊

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選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	58A
	Maximum Drain Source Voltage Vds	1.2kV
	Package Type	HPSOF-8L
	Series	NTB
	Mount Type	Through Hole
	Pin Count	7
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	117W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	105nC
	Maximum Gate Source Voltage Vgs	22V
	Forward Voltage Vf	4.5V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	選取全部
	品牌 onsemi
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 58A
	Maximum Drain Source Voltage Vds 1.2kV
	Package Type HPSOF-8L
	Series NTB
	Mount Type Through Hole
	Pin Count 7
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 117W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 105nC
	Maximum Gate Source Voltage Vgs 22V
	Forward Voltage Vf 4.5V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - NTBL045N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - 33 mohm, 650 V, M2, TOLL

The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Zero reverse recovery current of body diode

Ultra low gate charge

High speed switching and low capacitance

onsemi NTB N-Channel MOSFET, 58 A, 1.2 kV Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1

批量購買價格選項

Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - 33 mohm, 650 V, M2, TOLL

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