Infineon F4-8MR12W2M1H_B70 Type N-Channel MOSFET, 100 A, 1200 V Enhancement EasyPACK F48MR12W2M1HB70BPSA1
- RS庫存編號:
- 348-969
- 製造零件編號:
- F48MR12W2M1HB70BPSA1
- 製造商:
- Infineon
小計（1 件）*
HK$4,071.20
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單位 | 每單位 |
|---|---|
| 1 + | HK$4,071.20 |
* 參考價格
- RS庫存編號:
- 348-969
- 製造零件編號:
- F48MR12W2M1HB70BPSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | EasyPACK | |
| Series | F4-8MR12W2M1H_B70 | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 15.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 60747, 60068, 60749 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type EasyPACK | ||
Series F4-8MR12W2M1H_B70 | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 15.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 60747, 60068, 60749 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyPACK 2B CoolSiC MOSFET fourpack module 1200 V, 8 mΩ G1 with NTC, PressFIT contact technology and aluminium nitride ceramic. This MOSFET offers best-in-class packaging with a compact 12 mm height, optimizing both space and performance. It features leading-edge Wide Bandgap (WBG) materials, providing superior efficiency and power handling. The design incorporates very low module stray inductance, minimizing power losses and improving switching dynamics. Powered by the Enhanced CoolSiC MOSFET Gen 1, it delivers excellent thermal performance and reliability.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
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