Infineon F4-17MR12W1M1H_B76 Type N-Channel MOSFET, 45 A, 1200 V Enhancement EasyPACK F417MR12W1M1HB76BPSA1
- RS庫存編號:
- 349-252
- 製造零件編號:
- F417MR12W1M1HB76BPSA1
- 製造商:
- Infineon
小計（1 件）*
HK$1,899.40
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 11 件從 2026年6月08日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 + | HK$1,899.40 |
* 參考價格
- RS庫存編號:
- 349-252
- 製造零件編號:
- F417MR12W1M1HB76BPSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | F4-17MR12W1M1H_B76 | |
| Package Type | EasyPACK | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 34.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 20mW | |
| Forward Voltage Vf | 5.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747, IEC 60068, IEC 61140, IEC 60749 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series F4-17MR12W1M1H_B76 | ||
Package Type EasyPACK | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 34.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 20mW | ||
Forward Voltage Vf 5.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747, IEC 60068, IEC 61140, IEC 60749 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyPACK 1B CoolSiC MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC and PressFIT contact technology. This MOSFET is designed with best in class packaging, offering a compact 12 mm height for efficient space utilization. It leverages leading edge Wide Bandgap materials, providing enhanced power efficiency and performance. With very low module stray inductance, it minimizes power loss and improves switching dynamics.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
相关链接
- Infineon F4-17MR12W1M1HP_B76 Type N-Channel MOSFET 1200 V Enhancement EasyPACK F417MR12W1M1HPB76BPSA1
- Infineon F4-17MR12W1M1HP_B76 Type N-Channel MOSFET 1200 V Enhancement EasyPACK F433MR12W1M1HB76BPSA1
- Infineon F4-8MR12W2M1H_B70 Type N-Channel MOSFET 1200 V Enhancement EasyPACK F48MR12W2M1HB70BPSA1
- Infineon F4-11MR12W2M1H_B70 Type N-Channel MOSFET 1200 V Enhancement EasyPACK F411MR12W2M1HB70BPSA1
- Infineon Half Bridge EasyPACK N channel-Channel MOSFET Modules 1200 V Enhancement, 22-Pin EasyPACK
- Infineon Half Bridge EasyPACK N channel-Channel MOSFET Modules 1200 V Enhancement, 22-Pin EasyPACK
- Infineon FS13MR12W2M1H_C55 Type N-Channel MOSFET 1200 V Enhancement EasyPACK FS13MR12W2M1HPB11BPSA1
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement EasyPACK FS33MR12W1M1HB70BPSA1