Infineon IMB N-Channel MOSFET, 189 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R008M2HXTMA1
- RS庫存編號:
- 349-092
- 製造零件編號:
- IMBG120R008M2HXTMA1
- 製造商:
- Infineon
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HK$513.90
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|---|---|
| 1 - 9 | HK$513.90 |
| 10 - 99 | HK$462.50 |
| 100 + | HK$426.50 |
* 參考價格
- RS庫存編號:
- 349-092
- 製造零件編號:
- IMBG120R008M2HXTMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 189A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PG-TO263-7 | |
| Series | IMB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 800W | |
| Maximum Operating Temperature | 200°C | |
| Length | 15mm | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Width | 10.2mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 189A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PG-TO263-7 | ||
Series IMB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 800W | ||
Maximum Operating Temperature 200°C | ||
Length 15mm | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Width 10.2mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon IMB Series MOSFET, 1200V Drain Source Voltage, 189A Continuous Drain Current - IMBG120R008M2HXTMA1
This MOSFET is a high-voltage, N-channel enhancement device designed for demanding power-switching environments. It is intended for surface-mount applications where substantial current handling and elevated temperature tolerance are required. The component meets recognised industry package conventions and is suitable for use in industrial power stages that require robust conduction and switching capability.
Features and Benefits:
• 800W power dissipation enables sustained high-power operation
• 1200V drain-source rating supports high-voltage topologies
• 189A continuous drain current permits heavy-load conduction
• 21mΩ Rds(on) delivers low conduction losses under load
• 195nC typical gate charge suited to high-energy switching
• 7-pin PG-TO263-7 package simplifies high-power surface mounting
• 1200V drain-source rating supports high-voltage topologies
• 189A continuous drain current permits heavy-load conduction
• 21mΩ Rds(on) delivers low conduction losses under load
• 195nC typical gate charge suited to high-energy switching
• 7-pin PG-TO263-7 package simplifies high-power surface mounting
Applications
• Suitable for industrial inverter and converter stages
• Ideal for high-voltage switch-mode power supplies
• Used with motor-drive power modules requiring high current
• Can be used for renewable-energy power electronics
• Suitable for fast-switching, high-energy switching circuits
• Ideal for high-voltage switch-mode power supplies
• Used with motor-drive power modules requiring high current
• Can be used for renewable-energy power electronics
• Suitable for fast-switching, high-energy switching circuits
What thermal range can it operate across in harsh conditions?
It functions from -55°C up to 200°C, enabling deployment in extreme thermal environments.
How does the package type affect assembly on production boards?
The PG-TO263-7 surface-mount format provides a compact, low-profile solution optimised for automated soldering and heat-sink attachment.
What is the gate voltage endurance for control interfaces?
The device permits gate voltages up to 25V, allowing compatibility with common gate-driver outputs.
Is this device a channel enhancement or depletion type?
It is an N-channel enhancement-mode transistor suitable for conventional gate-driven switching topologies.
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