Infineon IPT N-Channel MOSFET, 297 A, 135 V Enhancement, 16-Pin PG-HSOF-16 IPTC020N13NM6ATMA1

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RS庫存編號:
349-133
製造零件編號:
IPTC020N13NM6ATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

297A

Maximum Drain Source Voltage Vds

135V

Package Type

PG-HSOF-16

Series

IPT

Mount Type

Surface

Pin Count

16

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

395W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

159nC

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high performance power applications. It offers very low on-resistance (RDS(on)), reducing conduction losses and enhancing efficiency. The MOSFET features an excellent gate charge x RDS(on) product (FOM) for superior switching performance. It also boasts a very low reverse recovery charge (Qrr), optimizing efficiency during switching events. With a high avalanche energy rating, it ensures reliability under demanding conditions and operates effectively at 175°C, making it ideal for high temperature environments.

Optimized for high frequency switching and synchronous rectification

Pb free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

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