Infineon OptiMOS-TM6 N-Channel MOSFET, 230 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N013TATMA1

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小計(1 包,共 5 件)*

HK$82.80

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每包*
5 - 45HK$16.56HK$82.80
50 - 95HK$15.74HK$78.70
100 - 495HK$14.58HK$72.90
500 - 995HK$13.42HK$67.10
1000 +HK$12.92HK$64.60

* 參考價格

RS庫存編號:
349-164
製造零件編號:
IAUCN04S6N013TATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

230A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS-TM6

Package Type

PG-LHDSO-10-1

Mount Type

Surface

Pin Count

10

Maximum Drain Source Resistance Rds

1.68mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

133W

Typical Gate Charge Qg @ Vgs

52nC

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

800mV

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101, RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
The Infineon Automotive MOSFET is an OptiMOS power MOSFET specifically designed for automotive applications. It is an N-channel, enhancement mode device with normal level characteristics. The MOSFET undergoes extended qualification beyond AEC-Q101 standards and features enhanced electrical testing, ensuring reliable performance. Its robust design makes it suitable for demanding automotive environments, offering durability and efficiency in power management.

MSL1 up to 260°C peak reflow

175°C operating temperature

RoHS compliant

Potential application

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