Infineon OptiMOS-TM6 N-Channel MOSFET, 230 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N013TATMA1
- RS庫存編號:
- 349-164
- 製造零件編號:
- IAUCN04S6N013TATMA1
- 製造商:
- Infineon
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額外添加50件可節省HK$41.00
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HK$82.80
訂單超過 HK$250.00 免費送貨
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單位 | 每單位 | 每包* | 節省 |
|---|---|---|---|
| 5 - 45 | HK$16.56 | HK$82.80 | - |
| 50 - 95 | HK$15.74 | HK$78.70 | HK$41.00 |
| 100 - 495 | HK$14.58 | HK$72.90 | HK$198.00 |
| 500 - 995 | HK$13.42 | HK$67.10 | HK$1,570.00 |
| 1000 + | HK$12.92 | HK$64.60 | HK$3,640.00 |
* 參考價格
- RS庫存編號:
- 349-164
- 製造零件編號:
- IAUCN04S6N013TATMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-LHDSO-10-1 | |
| Series | OptiMOS-TM6 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 1.68mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Power Dissipation Pd | 133W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 800mV | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-LHDSO-10-1 | ||
Series OptiMOS-TM6 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 1.68mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Power Dissipation Pd 133W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 800mV | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Infineon Automotive MOSFET is an OptiMOS power MOSFET specifically designed for automotive applications. It is an N-channel, enhancement mode device with normal level characteristics. The MOSFET undergoes extended qualification beyond AEC-Q101 standards and features enhanced electrical testing, ensuring reliable performance. Its robust design makes it suitable for demanding automotive environments, offering durability and efficiency in power management.
MSL1 up to 260°C peak reflow
175°C operating temperature
RoHS compliant
Potential application
相关链接
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