Infineon ISG Type N-Channel Power Transistor, 299 A, 40 V Enhancement, 10-Pin PG-VITFN-10 ISG0613N04NM6HATMA1
- RS庫存編號:
- 349-393
- 製造零件編號:
- ISG0613N04NM6HATMA1
- 製造商:
- Infineon
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HK$78.90
訂單超過 HK$250.00 免費送貨
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- 從 2026年10月01日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | HK$39.45 | HK$78.90 |
| 20 - 198 | HK$35.55 | HK$71.10 |
| 200 - 998 | HK$32.80 | HK$65.60 |
| 1000 - 1998 | HK$30.40 | HK$60.80 |
| 2000 + | HK$27.25 | HK$54.50 |
* 參考價格
- RS庫存編號:
- 349-393
- 製造零件編號:
- ISG0613N04NM6HATMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 299A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | ISG | |
| Package Type | PG-VITFN-10 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 0.88mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249‑2‑21, JEDEC | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 299A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series ISG | ||
Package Type PG-VITFN-10 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 0.88mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249‑2‑21, JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 dual N-channel 40 V MOSFETs in a scalable power block package. Dual N-channel MOSFETs in PQFN 6.3x6.0 features very low RDS(on) of 0.88 mΩ each with Q1/Q2 in a half-bridge configuration.
Minimized conduction losses
Reduced voltage overshoot
High power capability
Superior thermal performance
Lowest loop inductance
相关链接
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