Infineon ISA Dual N-Channel Power Transistor, 7.9 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA250250N04LMDSXTMA1
- RS庫存編號:
- 348-910
- 製造零件編號:
- ISA250250N04LMDSXTMA1
- 製造商:
- Infineon
享受批量購買折扣
額外添加200件可節省5%
查看批量定價選項小計（1 包，共 20 件）*
HK$115.60
訂單超過 HK$250.00 免費送貨
有庫存
- 3,900 件準備從其他地點送貨
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單位 | 每單位 | 每包* | 節省 |
|---|---|---|---|
| 20 - 180 | HK$5.78 | HK$115.60 | - |
| 200 - 480 | HK$5.49 | HK$109.80 | 5% |
| 500 - 980 | HK$5.085 | HK$101.70 | 12% |
| 1000 - 1980 | HK$4.685 | HK$93.70 | 18% |
| 2000 + | HK$4.51 | HK$90.20 | 21% |
* 參考價格
- RS庫存編號:
- 348-910
- 製造零件編號:
- ISA250250N04LMDSXTMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 7.9A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-DSO-8 | |
| Series | ISA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power Transistor | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 7.9A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-DSO-8 | ||
Series ISA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 3 Power Transistor is a dual N-channel, logic level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps reduce conduction losses and increase overall system efficiency. Additionally, the transistor offers superior thermal resistance, ensuring better heat management and reliability in demanding conditions. This combination of features makes it ideal for applications requiring efficient power switching and thermal performance.
100% avalanche tested
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249‑2‑21
相关链接
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