Infineon ISA Type N, Type P-Channel MOSFET, 10.2 A, 30 V Enhancement, 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA

RS庫存編號:: 348-906
製造零件編號:: ISA150233C03LMDSXTMA
製造商:: Infineon

Infineon ISA Type N, Type P-Channel MOSFET, 10.2 A, 30 V Enhancement, 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA

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小計（1 包，共 20 件）*

HK$110.80

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單位	每單位	每包*
20 - 180	HK$5.54	HK$110.80
200 - 480	HK$5.265	HK$105.30
500 +	HK$4.875	HK$97.50

* 參考價格

RS庫存編號:: 348-906
製造零件編號:: ISA150233C03LMDSXTMA
製造商:: Infineon

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N, Type P
	Maximum Continuous Drain Current Id	10.2A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PG-DSO-8
	Series	ISA
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	23.3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	14nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	±20 V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC61249‐2‐21, JEDEC
	Height	1.75mm
	Width	5 mm
	Length	6.2mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N, Type P
	Maximum Continuous Drain Current Id 10.2A
	Maximum Drain Source Voltage Vds 30V
	Package Type PG-DSO-8
	Series ISA
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 23.3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 14nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs ±20 V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC61249‐2‐21, JEDEC
	Height 1.75mm
	Width 5 mm
	Length 6.2mm
	Automotive Standard No

Datasheet - ISA150233C03LMDSXTMA

COO (Country of Origin):: CN

The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.

100% avalanche tested

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249‑2‑21

Infineon ISA Type N, Type P-Channel MOSFET, 10.2 A, 30 V Enhancement, 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA

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