Infineon ISA Type N, Type P-Channel MOSFET, 9.6 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1

RS庫存編號:: 348-909
製造零件編號:: ISA170230C04LMDSXTMA1
製造商:: Infineon

Infineon ISA Type N, Type P-Channel MOSFET, 9.6 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1

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小計（1 包，共 10 件）*

HK$88.40

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單位	每單位	每包*
10 - 90	HK$8.84	HK$88.40
100 - 240	HK$8.40	HK$84.00
250 - 490	HK$7.78	HK$77.80
500 - 990	HK$7.16	HK$71.60
1000 +	HK$6.89	HK$68.90

* 參考價格

RS庫存編號:: 348-909
製造零件編號:: ISA170230C04LMDSXTMA1
製造商:: Infineon

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N, Type P
	Maximum Continuous Drain Current Id	9.6A
	Maximum Drain Source Voltage Vds	40V
	Series	ISA
	Package Type	PG-DSO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	29.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	150°C
	Width	5 mm
	Length	6.2mm
	Standards/Approvals	JEDEC, IEC61249‐2‐21
	Height	1.75mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N, Type P
	Maximum Continuous Drain Current Id 9.6A
	Maximum Drain Source Voltage Vds 40V
	Series ISA
	Package Type PG-DSO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 29.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 150°C
	Width 5 mm
	Length 6.2mm
	Standards/Approvals JEDEC, IEC61249‐2‐21
	Height 1.75mm
	Automotive Standard No

Datasheet - ISA170230C04LMDSXTMA1

COO (Country of Origin):: CN

The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.

100% avalanche tested

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249‑2‑21

Infineon ISA Type N, Type P-Channel MOSFET, 9.6 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1

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