Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET, -14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8 BSO080P03SHXUMA1

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小計(1 包,共 5 件)*

HK$1,007.90

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5 - 45HK$201.58HK$1,007.90
50 - 95HK$195.52HK$977.60
100 - 245HK$191.60HK$958.00
250 - 995HK$187.76HK$938.80
1000 +HK$184.02HK$920.10

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RS庫存編號:
273-5242
製造零件編號:
BSO080P03SHXUMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-14.9A

Maximum Drain Source Voltage Vds

-30V

Package Type

PG-DSO-8

Series

BSO080P03S H OptiMOSTM-P

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25V

Typical Gate Charge Qg @ Vgs

-102nC

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

-0.82V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

40mm

Height

1.5mm

Standards/Approvals

IEC61249-2-21, JEDEC, RoHS

Width

40mm

Automotive Standard

No

The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.

Logic level

Halogen free

RoHS compliant

Pb free lead plating

Enhancement mode

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