Infineon IGOT65 N-Channel MOSFET, 44 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R035D2AUMA1
- RS庫存編號:
- 351-882
- 製造零件編號:
- IGOT65R035D2AUMA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 件）*
HK$124.30
訂單超過 HK$250.00 免費送貨
有庫存
- 800 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | HK$124.30 |
| 10 - 99 | HK$111.90 |
| 100 + | HK$103.20 |
* 參考價格
- RS庫存編號:
- 351-882
- 製造零件編號:
- IGOT65R035D2AUMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-DSO-20 | |
| Series | IGOT65 | |
| Mount Type | Surface | |
| Pin Count | 20 | |
| Maximum Drain Source Resistance Rds | 0.075Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 134W | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-DSO-20 | ||
Series IGOT65 | ||
Mount Type Surface | ||
Pin Count 20 | ||
Maximum Drain Source Resistance Rds 0.075Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 134W | ||
Maximum Gate Source Voltage Vgs 10V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- COO (Country of Origin):
- ID
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.
650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Top-side cooled package
JEDEC qualified (JESD47, JESD22)
相关链接
- Infineon IGOT65 N-Channel MOSFET 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R055D2AUMA1
- Infineon IGOT65 N-Channel MOSFET 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R045D2AUMA1
- Infineon IGOT65 N-Channel MOSFET 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R025D2AUMA1
- Infineon CoolGaN Power Transistor 600 V Enhancement, 20-Pin PG-DSO-20-85
- Infineon CoolSiC MOSFET 650 V G1 N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
- Infineon CoolGaN Power Transistor 600 V Enhancement, 20-Pin PG-DSO-20-85 IGO60R070D1AUMA2
- Infineon ICE2HS01GXUMA1 AC-DC 20-Pin, PG-DSO-20
- Infineon TLE9104SHXUMA1 Low Side PG-DSO-20