Infineon IGOT65 N-Channel MOSFET, 28 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R055D2AUMA1
- RS庫存編號:
- 351-879
- 製造零件編號:
- IGOT65R055D2AUMA1
- 製造商:
- Infineon
享受批量購買折扣
額外添加10件可節省9%
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HK$73.10
訂單超過 HK$250.00 免費送貨
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- 800 件準備從其他地點送貨
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單位 | 每單位 | 節省 |
|---|---|---|
| 1 - 9 | HK$73.10 | - |
| 10 - 99 | HK$65.80 | 9% |
| 100 - 499 | HK$60.70 | 16% |
| 500 - 999 | HK$56.30 | 22% |
| 1000 + | HK$50.50 | 30% |
* 參考價格
- RS庫存編號:
- 351-879
- 製造零件編號:
- IGOT65R055D2AUMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IGOT65 | |
| Package Type | PG-DSO-20 | |
| Mount Type | Surface | |
| Pin Count | 20 | |
| Maximum Drain Source Resistance Rds | 0.066Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IGOT65 | ||
Package Type PG-DSO-20 | ||
Mount Type Surface | ||
Pin Count 20 | ||
Maximum Drain Source Resistance Rds 0.066Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Gate Source Voltage Vgs 10V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- COO (Country of Origin):
- ID
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.
650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Top-side cooled package
JEDEC qualified (JESD47, JESD22)
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