Infineon IPT0 N-Channel MOSFET, 243 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT023N10NM5LF2ATMA1
- RS庫存編號:
- 351-908
- 製造零件編號:
- IPT023N10NM5LF2ATMA1
- 製造商:
- Infineon
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HK$110.80
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- 加上 1,988 件從 2026年9月07日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | HK$55.40 | HK$110.80 |
| 20 - 198 | HK$49.85 | HK$99.70 |
| 200 - 998 | HK$46.00 | HK$92.00 |
| 1000 - 1998 | HK$42.70 | HK$85.40 |
| 2000 + | HK$38.25 | HK$76.50 |
* 參考價格
- RS庫存編號:
- 351-908
- 製造零件編號:
- IPT023N10NM5LF2ATMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 243A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT0 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 144nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.58mm | |
| Standards/Approvals | RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified | |
| Width | 10.1mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 243A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-HSOF-8 | ||
Series IPT0 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 144nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 10.58mm | ||
Standards/Approvals RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified | ||
Width 10.1mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- AT
The Infineon OptiMOS 5 Linear FET 2 technology enables the best-in-class trade-off between on-state resistance and linear mode capability. Combined with the TOLL package, IPT023N10NM5LF2 is targeted for inrush current protection such as hot-swap, e-fuse, and battery protection in battery management systems (BMS).
Wide safe operating area (SOA)
Low RDS(on)
Lower IGSS compared to Linear FET
Optimized transfer characteristic
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