Infineon IMZC120 Type N-Channel MOSFET, 80 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R022M2HXKSA1
- RS庫存編號:
- 351-925
- 製造零件編號:
- IMZC120R022M2HXKSA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
HK$201.50
訂單超過 HK$250.00 免費送貨
有庫存
- 205 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | HK$201.50 |
| 10 - 99 | HK$181.40 |
| 100 + | HK$167.30 |
* 參考價格
- RS庫存編號:
- 351-925
- 製造零件編號:
- IMZC120R022M2HXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | IMZC120 | |
| Package Type | PG-TO-247-4-U07 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.5V | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 329W | |
| Maximum Operating Temperature | 200°C | |
| Width | 16 mm | |
| Length | 23.5mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series IMZC120 | ||
Package Type PG-TO-247-4-U07 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.5V | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 329W | ||
Maximum Operating Temperature 200°C | ||
Width 16 mm | ||
Length 23.5mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET discrete 1200 V, 22 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Short circuit withstand time 2 μs
Benchmark gate threshold voltage 4.2 V
Robust against parasitic turn on
Very low switching losses
Tighter VGS(th) parameter distribution
相关链接
- Infineon IMZC120 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R012M2HXKSA1
- Infineon IMZC120 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R017M2HXKSA1
- Infineon IMZC120 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R026M2HXKSA1
- Infineon IMZC120 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R034M2HXKSA1
- Infineon IMZC120 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R053M2HXKSA1
- Infineon IMZC120 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R078M2HXKSA1
- Infineon IMZC120 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R040M2HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U02 IMZA120R030M1HXKSA1