Infineon IMZC120 N-Channel MOSFET, 49 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R026M2HXKSA1
- RS庫存編號:
- 351-927
- 製造零件編號:
- IMZC120R026M2HXKSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 351-927
- 製造零件編號:
- IMZC120R026M2HXKSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | IMZC120 | |
| Package Type | PG-TO-247-4-U07 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 69mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 289W | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Forward Voltage Vf | 5.5V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Length | 23.5mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Width | 16mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series IMZC120 | ||
Package Type PG-TO-247-4-U07 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 69mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 289W | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Forward Voltage Vf 5.5V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Length 23.5mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Width 16mm | ||
Automotive Standard No | ||
Infineon IMZC120 Series MOSFET, 1200V Drain Source Voltage, 49A Continuous Drain Current - IMZC120R026M2HXKSA1
This MOSFET is a high-voltage N-channel switching device designed for demanding power-conversion roles in industrial electronics. It operates across an extended thermal range suitable for harsh environments and is packaged for through-hole mounting, providing a robust option where high blocking voltage and substantial continuous current capability are required.
Features and Benefits:
• 1200V drain-source rating for high-voltage switching capability
• 49A continuous drain current enabling substantial load handling
• 69mΩ Rds(on) for reduced conduction losses at operating currents
• 289W maximum power dissipation for high thermal stress tolerance
• 60nC typical gate charge for predictable switching control
• 25V gate-source limit supporting common gate-drive voltages
• 49A continuous drain current enabling substantial load handling
• 69mΩ Rds(on) for reduced conduction losses at operating currents
• 289W maximum power dissipation for high thermal stress tolerance
• 60nC typical gate charge for predictable switching control
• 25V gate-source limit supporting common gate-drive voltages
Applications
• Suitable for industrial inverter and motor drive designs
• Ideal for high-voltage power supplies and converters
• Used for traction and renewable-energy power electronics
• Can be used for hard-switching and chopper topologies
• Used with through-hole heatsinking arrangements for thermal management
• Ideal for high-voltage power supplies and converters
• Used for traction and renewable-energy power electronics
• Can be used for hard-switching and chopper topologies
• Used with through-hole heatsinking arrangements for thermal management
What package type does it use and how does that affect mounting?
It is supplied in a TO-247-4 through-hole format which facilitates secure bolted heatsink attachment and straightforward PCB mounting for robust mechanical and thermal connections.
How does its thermal range influence placement in systems?
With an operating span from -55°C to 200°C it can be located near heat-generating components or used in environments with wide ambient temperature swings without immediate derating at system level.
What gate-drive considerations are necessary for switching performance?
Drive circuitry must respect the 25V gate-source limit and provide sufficient drive strength to handle the 60nC gate charge for controlled transition times and switching losses.
How should designers account for power dissipation in thermal design?
Thermal management must consider the 289W dissipation ceiling
appropriate heatsinking, thermal interface materials and board layout are required to maintain junction temperatures within safe operating limits.
相关链接
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