Infineon IMZC120 N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R012M2HXKSA1

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RS庫存編號:
351-922
製造零件編號:
IMZC120R012M2HXKSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

91A

Maximum Drain Source Voltage Vds

1200V

Package Type

PG-TO-247-4-U07

Series

IMZC120

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

124nC

Maximum Gate Source Voltage Vgs

25V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

480W

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

Infineon IMZC120 Series MOSFET, 1200V Maximum Drain Source Voltage, 91A Maximum Continuous Drain Current - IMZC120R012M2HXKSA1


This MOSFET is a high-voltage N-channel enhancement device designed for power switching and conversion in demanding environments. It is intended for through-hole mounting and suits applications needing robust drain-to-source voltage capability and substantial continuous current handling while operating across wide temperature ranges.

Features and Benefits:


• 1200V drain tolerance enables high-voltage switching
• 91A continuous drain current supports heavy load handling
• 12mΩ Rds(on) reduces conduction losses during operation
• 480W maximum dissipation allows sustained power handling
• 124nC typical gate charge balances switching speed and drive effort
• Through-hole 4-pin PG-TO-247-4-U07 package simplifies heatsinking

Applications


• Suitable for industrial high-voltage inverters
• Ideal for power supplies in telecoms equipment
• Used with motor drives requiring high-current switching
• Can be used for high-voltage DC-DC conversion modules
• Appropriate for laboratory power testing rigs

What gate-drive considerations should I account for?


Expect a typical gate charge of 124nC at rated Vgs, so design gate drivers capable of sourcing and sinking sufficient peak currents to meet desired switching transitions without excessive delay.

How does thermal management impact uptime at full load?


With a maximum power dissipation of 480W, effective heatsinking and thermal-interface design are necessary to maintain junction temperature within limits during prolonged high-power operation.

Are there restrictions on ambient operating temperature?


The device is specified to operate from -55°C up to 175°C, permitting use in both cold-start and high-temperature environments when appropriate thermal design is applied.

Which mounting method is required for optimal performance?


It is intended for through-hole assembly in the PG-TO-247-4-U07 4-pin format, allowing direct attachment to a heat sink or chassis for improved thermal conduction.

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