onsemi NTT N-Channel Single MOSFETs, 65 A, 40 V Enhancement, 8-Pin WDFN8 NTTFS4D9N04XMTAG
- RS庫存編號:
- 648-506
- 製造零件編號:
- NTTFS4D9N04XMTAG
- 製造商:
- onsemi
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可享批量折扣
查看批量定價選項小計（1 組，共 20 件）*
HK$113.40
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 1,500 件從 2027年8月25日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 20 - 180 | HK$5.67 | HK$113.40 |
| 200 - 980 | HK$3.525 | HK$70.50 |
| 1000 - 1980 | HK$3.375 | HK$67.50 |
| 2000 + | HK$3.275 | HK$65.50 |
* 參考價格
- RS庫存編號:
- 648-506
- 製造零件編號:
- NTTFS4D9N04XMTAG
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | WDFN8 | |
| Series | NTT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 38W | |
| Typical Gate Charge Qg @ Vgs | 10.4nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Pb-Free | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type WDFN8 | ||
Series NTT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 38W | ||
Typical Gate Charge Qg @ Vgs 10.4nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Pb-Free | ||
Width 3.3mm | ||
Length 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Low RDS(on)
Low Capacitance
Small Footprint of 3.3 x 3.3 mm
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