onsemi UF3 N-Channel Single MOSFETs, 7.6 A, 1200 V Enhancement, 3-Pin TO-247-3 UF3C120400K3S
- RS庫存編號:
- 648-529
- 製造零件編號:
- UF3C120400K3S
- 製造商:
- onsemi
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HK$238.10
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 600 件從 2027年2月17日 起裝運發貨
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單位 | 每單位 | 每袋* |
|---|---|---|
| 2 - 8 | HK$119.05 | HK$238.10 |
| 10 + | HK$116.70 | HK$233.40 |
* 參考價格
- RS庫存編號:
- 648-529
- 製造零件編號:
- UF3C120400K3S
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7.6A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | UF3 | |
| Package Type | TO-247-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 515mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Pb-Free | |
| Height | 5.03mm | |
| Width | 15.9mm | |
| Length | 20.96mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7.6A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series UF3 | ||
Package Type TO-247-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 515mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Pb-Free | ||
Height 5.03mm | ||
Width 15.9mm | ||
Length 20.96mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CH
The ON Semiconductor EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and super junction devices. Ideal for switching inductive loads.
On-resistance RDS(on)
Maximum operating temperature of 175 °C
Excellent Reverse Recover
Low Gate Charge
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