Vishay SiR870BDP N-Channel Single MOSFETs, 81 A, 100 V Enhancement, 8-Pin PowerPAK SIR870BDP-T1-UE3
- RS庫存編號:
- 653-199
- 製造零件編號:
- SIR870BDP-T1-UE3
- 製造商:
- Vishay
小計（1 卷，共 3000 件）*
HK$38,160.00
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 6,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | HK$12.72 | HK$38,160.00 |
* 參考價格
- RS庫存編號:
- 653-199
- 製造零件編號:
- SIR870BDP-T1-UE3
- 製造商:
- Vishay
規格
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透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 81A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiR870BDP | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0061Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Operating Temperature | 150°C | |
| Height | 610μm | |
| Width | 5.15mm | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 81A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiR870BDP | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0061Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Operating Temperature 150°C | ||
Height 610μm | ||
Width 5.15mm | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver low RDS(on), fast switching, and optimized thermal performance.
Pb Free
Halogen free
RoHS compliant
相关链接
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