Vishay SISS176LDN Type N-Channel Single MOSFETs, 42.3 A, 70 V Enhancement, 8-Pin PowerPAK
- RS庫存編號:
- 653-100
- 製造零件編號:
- SISS176LDN-T1-UE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 1 件）*
HK$5.10
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 6,000 件從 2026年3月02日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 24 | HK$5.10 |
| 25 - 99 | HK$5.00 |
| 100 - 499 | HK$4.90 |
| 500 - 999 | HK$4.10 |
| 1000 + | HK$3.90 |
* 參考價格
- RS庫存編號:
- 653-100
- 製造零件編號:
- SISS176LDN-T1-UE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42.3A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Package Type | PowerPAK | |
| Series | SISS176LDN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0125Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Maximum Power Dissipation Pd | 39W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.30mm | |
| Height | 0.41mm | |
| Width | 3.30 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42.3A | ||
Maximum Drain Source Voltage Vds 70V | ||
Package Type PowerPAK | ||
Series SISS176LDN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0125Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Maximum Power Dissipation Pd 39W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.30mm | ||
Height 0.41mm | ||
Width 3.30 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay TrenchFET Gen IV N-Channel Power MOSFET rated for 70 V drain-source voltage and 42.3 A continuous drain current. It features a Compact PowerPAK 1212-8S surface-mount package, making it Ideal for DC/DC converters, synchronous rectification, motor control, and load switching.
Pb Free
Halogen free
RoHS compliant
相关链接
- Vishay SISS176LDN Type N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK SISS176LDN-T1-UE3
- Vishay SISS178LDN Type N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK
- Vishay SISS178LDN Type N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK SISS178LDN-T1-UE3
- Vishay SiR870BDP Type N-Channel Single MOSFETs 100 V Enhancement, 8-Pin PowerPAK
- Vishay SiR870BDP Type N-Channel Single MOSFETs 100 V Enhancement, 8-Pin PowerPAK SIR870BDP-T1-UE3
- Vishay TrenchFET Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212 SiS176LDN-T1-GE3
- Vishay SISS32LDN Type N-Channel Single MOSFETs 80 V Enhancement, 8-Pin PowerPAK