Vishay TrenchFET N channel-Channel Power MOSFET, 42.3 A, 70 V N, 8-Pin PowerPAK SISS176LDN-T1-BE3
- RS庫存編號:
- 851-508
- 製造零件編號:
- SISS176LDN-T1-BE3
- 製造商:
- Vishay
N
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HK$7.59
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- 從 2027年9月13日 發貨
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|---|---|
| 1 - 24 | HK$7.59 |
| 25 - 99 | HK$5.03 |
| 100 + | HK$2.90 |
* 參考價格
- RS庫存編號:
- 851-508
- 製造零件編號:
- SISS176LDN-T1-BE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 42.3A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Series | TrenchFET | |
| Package Type | PowerPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0125Ω | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 12.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Width | 5.25mm | |
| Height | 1.04mm | |
| Length | 6.05mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 42.3A | ||
Maximum Drain Source Voltage Vds 70V | ||
Series TrenchFET | ||
Package Type PowerPAK | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0125Ω | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 12.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 Qualified | ||
Width 5.25mm | ||
Height 1.04mm | ||
Length 6.05mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET offers high efficiency in power management, featuring a robust construction that supports various electrical demands in Advanced electronic applications.
TrenchFET Gen IV technology enhances performance
Very low R DS(on) at various gate voltages ensures efficiency
Comprehensive testing guarantees reliability in operation
Lead (Pb)-free and halogen-free composition aligns with environmental standards
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