Vishay TrenchFET N channel-Channel Power MOSFET, 40 A, 80 V N, 8-Pin PowerPAK SIR178DP-T1-BE3
- RS庫存編號:
- 851-502
- 製造零件編號:
- SIR178DP-T1-BE3
- 製造商:
- Vishay
N
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HK$18.31
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- 從 2027年1月18日 發貨
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|---|---|
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| 100 - 499 | HK$6.92 |
| 500 + | HK$6.70 |
* 參考價格
- RS庫存編號:
- 851-502
- 製造零件編號:
- SIR178DP-T1-BE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | PowerPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0029Ω | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 69.5nC | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Height | 1.04mm | |
| Length | 6.05mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type PowerPAK | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0029Ω | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 69.5nC | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 Qualified | ||
Height 1.04mm | ||
Length 6.05mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TW
The Vishay high-performance N-Channel power MOSFET designed for efficient energy management. Its primary function is to optimise conduction with low power loss, making it suitable for various power applications.
TrenchFET Gen IV technology ensures superior performance
Extremely low on-state resistance minimises conduction losses
Supports low voltage gate drive for enhanced efficiency
Completely tested for reliability under R and UIS conditions
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