Vishay TrenchFET N channel-Channel Power MOSFET, 20 A, 250 V N, 8-Pin PowerPAK SIR692DP-T1-BE3

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  • 2027年9月13日 發貨
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RS庫存編號:
851-504
製造零件編號:
SIR692DP-T1-BE3
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

250V

Series

TrenchFET

Package Type

PowerPAK

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.067Ω

Channel Mode

N

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

25.3nC

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101 Qualified

Height

1.04mm

Length

6.05mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
DE
The Vishay high-performance MOSFET designed for efficient power management in various electronic systems, ensuring reliability and precision in switching applications.

Utilises ThunderFET technology for optimal RDS(on), Qg, Qsw, and Qoss balancing

Guaranteed 100% Rg and UIS tested for enhanced reliability

Supports a maximum drain-source voltage of 250V

Minimal on-resistance of 0.063Ω at VGS of 10V ensures low power loss

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