Vishay SISS64DN N channel-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS64DN-T1-BE3

N
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  • 2027年6月25日 發貨
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RS庫存編號:
736-354
製造零件編號:
SISS64DN-T1-BE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212-8S

Series

SISS64DN

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0021Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

21nC

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Width

3.3mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay Power MOSFET delivers exceptional performance with its N-Channel configuration. Designed primarily for efficient switching applications, it optimises power management in various electronic circuits, ensuring reliable operation under demanding conditions.

Features TrenchFET Gen IV technology for enhanced efficiency

Optimised Qg, Qgd, and Qgs ratios reduce switching losses

Continuous drain current rating of up to 40A for robust performance

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