Vishay SISS26DN N channel-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8S SISS26DN-T1-BE3

N
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  • 2027年6月23日 發貨
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RS庫存編號:
736-350
製造零件編號:
SISS26DN-T1-BE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

60V

Series

SISS26DN

Package Type

PowerPAK 1212-8S

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0045Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

24.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

57W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Width

3.3mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed for efficient power management applications. It operates effectively at high voltages with low on-resistance, making it Ideal for synchronous rectification and DC-DC converters.

Rated for a drain-source voltage of 60 V, ensuring robust operation

Optimised for minimal power loss in various applications

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