Vishay TrenchFET N channel-Channel Power MOSFET, 45.3 A, 70 V N, 8-Pin PowerPAK SISS178LDN-T1-BE3
- RS庫存編號:
- 851-509
- 製造零件編號:
- SISS178LDN-T1-BE3
- 製造商:
- Vishay
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 組，共 1 件）*
HK$7.59
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年9月13日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 24 | HK$7.59 |
| 25 - 99 | HK$5.03 |
| 100 + | HK$2.90 |
* 參考價格
- RS庫存編號:
- 851-509
- 製造零件編號:
- SISS178LDN-T1-BE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 45.3A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Series | TrenchFET | |
| Package Type | PowerPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.013Ω | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 18.7nC | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.05mm | |
| Height | 1.04mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 45.3A | ||
Maximum Drain Source Voltage Vds 70V | ||
Series TrenchFET | ||
Package Type PowerPAK | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.013Ω | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 18.7nC | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Operating Temperature 175°C | ||
Length 6.05mm | ||
Height 1.04mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET offers high efficiency in power management, featuring a robust construction that supports various electrical demands in Advanced electronic applications.
Rated for a drain-source voltage of 70 V, ensuring reliable performance in diverse applications
Exhibits low on-resistance with a maximum of 0.0109 Ω at 4.5 V, enhancing energy efficiency
Designed to handle continuous drain currents up to 42.3 A, supporting high-power operations
Incorporates a single Pulse avalanche rating of 15 A, safeguarding against voltage transients
相关链接
- Vishay SISS178LDN Type N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK SISS178LDN-T1-UE3
- Vishay SISS178LDN Type N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK
- Vishay TrenchFET N channel-Channel Power MOSFET 70 V N, 8-Pin PowerPAK SISS176LDN-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 80 V N, 8-Pin PowerPAK SIR178DP-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 250 V N, 8-Pin PowerPAK SIR692DP-T1-BE3
- Vishay TrenchFET Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212 SiS178LDN-T1-GE3
- Vishay SI34 N channel-Channel Power MOSFET -20 V P, 8-Pin PowerPAK SI3493DDV-T1-BE3
- Vishay SISS26DN N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8S SISS26DN-T1-BE3