Vishay SIR680LDP N-Channel MOSFET, 130 A, 80 V Enhancement, 8-Pin PowerPAK SO-8 SIR680LDP-T1-BE3
- RS庫存編號:
- 736-348
- 製造零件編號:
- SIR680LDP-T1-BE3
- 製造商:
- Vishay
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HK$22.92
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|---|---|---|
| 1 - 9 | HK$22.92 | - |
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| 25 - 99 | HK$7.83 | HK$377.25 |
| 100 - 499 | HK$7.60 | HK$1,532.00 |
| 500 + | HK$7.38 | HK$7,770.00 |
* 參考價格
- RS庫存編號:
- 736-348
- 製造零件編號:
- SIR680LDP-T1-BE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 130A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SIR680LDP | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0028Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 5.15mm | |
| Length | 6.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 130A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SIR680LDP | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0028Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 5.15mm | ||
Length 6.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET is designed for high-efficiency power management in various applications. It operates efficiently at 80 V and excels in synchronous rectification and motor drive switching tasks.
Features a trenchFET Gen IV technology for improved power efficiency
Displays very low RDS(on) of 0.0028 Ω at 10 V, ensuring minimal conduction losses
Rated for a continuous drain current of 130 A, making it suitable for demanding applications
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