STMicroelectronics Sct N-Channel Power MOSFET, 110 A, 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG
- RS庫存編號:
- 719-464
- 製造零件編號:
- SCT012W90G3AG
- 製造商:
- STMicroelectronics
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HK$189.30
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- 最終 286 個，準備發貨
單位 | 每單位 |
|---|---|
| 1 - 4 | HK$189.30 |
| 5 + | HK$183.60 |
* 參考價格
- RS庫存編號:
- 719-464
- 製造零件編號:
- SCT012W90G3AG
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | HIP-247-3 | |
| Series | Sct | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 625W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 138nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 2.8V | |
| Maximum Operating Temperature | 200°C | |
| Height | 20.15mm | |
| Length | 15.75mm | |
| Width | 5.15mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type HIP-247-3 | ||
Series Sct | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 625W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 138nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 2.8V | ||
Maximum Operating Temperature 200°C | ||
Height 20.15mm | ||
Length 15.75mm | ||
Width 5.15mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
相关链接
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