STMicroelectronics Sct N channel-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4
- RS庫存編號:
- 719-470
- 製造零件編號:
- SCT025W120G3-4
- 製造商:
- STMicroelectronics
N
暫時無法供應
我們不知道此物品是否會到貨，因為製造商正在對其逐步停產。
- RS庫存編號:
- 719-470
- 製造零件編號:
- SCT025W120G3-4
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247-4 | |
| Series | Sct | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.7V | |
| Maximum Power Dissipation Pd | 388W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.9mm | |
| Height | 25.27mm | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247-4 | ||
Series Sct | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.7V | ||
Maximum Power Dissipation Pd 388W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.9mm | ||
Height 25.27mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability (TJ equal to 200 °C)
Source sensing pin for increased efficiency
相关链接
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT025W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247 SCT025W120G3AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247 SCTW60N120G2
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247 SCT040W120G3AG